Everspin spin torque MRAM technology-CodePudding

MRAM main structure made up of three layers structure MTJ: free layer layer (free), fixed layer and oxide layer, free and fixed layers of material are respectively CoFeB and MgO style, MRAM is a nonvolatile magnetic random access memory, it has a static random access memory (SRAM) high speed read write ability, as well as the dynamic random access memory (DRAM) of high integration, and basically can be infinitely repeated write, memory read circuit is loaded by the same voltage to judge the size of the output current to judge the information of the memory,

Everspin latest MRAM technology USES the rotating torque transmission characteristics, it is using polarization current manipulation of electron spin, layer on the establishment of a free state of the magnetic, to the storage array in a programming or writing,

Compared with Toggle MRAM, spin transfer torque MRAM or STT - MRAM significantly reduces the switch power, and with high scalability, in order to achieve higher density storage products, our third generation of MRAM technology using vertical MTJ, we have been developing with a high perpendicular magnetic anisotropy materials and vertical MTJ lamination design, can provide long data retention, small cell size, larger density, high durability and low consumption,

1 gb is the latest generation of STT - MRAM, use of ST - DDR4, it is a kind of similar to JEDEC DDR4 interface, need to do some modifications to use persistence of MRAM technology, the performance of these products are similar to the persistence of DRAM, but don't need to refresh, plans to develop other products, these products will use the high speed serial interface for all kinds of embedded application,

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