Researchers have suggested using the ferromagnetic material manufacturing STT - MRAM devices - in contrast to the current use of ferromagnetic materials, the researchers say these material will make high density devices can be implemented with a low current high speed writing,
Antiferromagnetic on the micro scale of magnetic material, but not on the macro scale, this means that made from these materials MRAM element between the adjacent bits of no magnetic - this means that you can think of them very tightly packed,
Researchers have proved that the electric current can be used to reversibly switch at the bottom of heavy metals on the composition of antiferromagnetic storage, and importantly, for the first time to use with existing semiconductor manufacturing technology is fully compatible with the materials to do this, in addition the work achieved so far reported minimum of ferromagnetic materials are used to switch the current density,
Finally, the researchers have also shown that the device can be designed to simulate (today) components, rather than the bistable components, which means it can be found in the synapses of neuromorphic computing application,
CodePudding user response:
Current can be used for reversible switch at the bottom of heavy metals on the composition of antiferromagnetic storage, and importantly, for the first time to use with existing semiconductor manufacturing technology is fully compatible with the materials to do this, in addition the work achieved so far reported minimum of ferromagnetic materials are used to switch the current density,CodePudding user response:
The equipment can be designed to simulate (today) components, rather than the bistable components, which means it can be found in the synapses of neuromorphic computing applications,