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Mesh
X.m esh loc=2.0 spac=1
X.m esh loc=10.0 spac=1
X.m esh loc=22.0 spac=1
Spac y.m esh loc=0.02=0.02
Y.m esh loc=0.50 spac=0.02
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Region number=1 x.m=2.0 x.m in ax=22 y.m=0.02 y.m ax=0 in material=Al2O3
Region number=2 x.m=2.0 x.m in ax=22 y.m=0.0 y.m ax=0.3 in the user. The material=Ga2O3
Region number=3 x.m=2.0 x.m in ax=22 y.m=0.3 y.m ax=0.5 in the user. The material=Ga2O3
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Electrode name=gate number 1 x.m==8 in x.m 11 y.m ax==- 2 y.m in ax=1.98
Electrode name=drain x.m number=2=20 in tapping x.m 22 y.m ax==0 y.m in ax=0.15
Electrode name=source number=3 x.m=2 in x.m y.m ax=0=0 y.m in ax=0.15
Elec substrate
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Doping uniform conc + 10=7 e p.t ype x.l eft=2 x.r d.light=22 y.t op=0 y.b ottom=0.3
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Doping uniform conc=5 e + 19 n.t ype x.l eft=20 x.r d.light=22 y.t op=0 y.b ottom=0.15
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Doping uniform conc=5 e + 19 n.t ype x.l eft=2 x.r d.light=0 y.t op=0 y.b ottom=0.15
The save outfile=nmos5. STR
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Material material=Ga2O3 user. Group=semiconductor user. The default=GaN
Permittivity=10.0 \
Affinity=4.0 \
Eg300=4.8 \
Nc300=3.72 e18 \
Nv300=3.72 e18 \
Mun=118 \
The mup=50 \
Ni=1.79 e-22 \
Tcon. Const=0.13 \
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Models
Models fldmob SRH auger BGN print temperature
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Contact name=gate workfuncton=5.23
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Solve init
The log outf=nmos5_0. Log
Solve name=drain vdrain tapping=0 40 vstep vfinal==1
Log off
1. When running the program, model has been an error, don't know what it is, in the preliminary stage, what a great god can guide?
2. The gate metal with Ti/Pt/Au how to define?
3. The source drain doped Si?
CodePudding user response:
Hello, will the custom material