LN8608 is a suspended substrate and P_EPI technology based high voltage 60 V three-phase grid drive, has three independent high and low side output, which can be used to drive the whole bridge circuit of large power MOSFET and IGBT, LN8608 compatible with CMOS and LSTTL input signal level, minimum to 3.3 V, output stage can provide higher peak current drive, to minimize the cross conduction time, transmission delay did match the output stage, simplifies the application in the high frequency occasions, LN8608 built-in direct prevent and dead zone time, to avoid being driven high and low side MOSFET and IGBT direct, effective protection of power devices, LN8608 also built-in VCC and VBS under-voltage protection circuit, prevent power tube work under low voltage,
product features
Pressure + 60 v
IO + 1.0 A output current ability, IO - 1.2 - A
High and low side suspension isolation
Power input range 7 v to 20 v
Signal input level 3.3 V, 5 V, 15 V compatible
Prevent cross conduction logic
The output transmission delay matching
Built-in VCC/VB under-voltage protection
Built-in compete with dead zone time and the direct circuit
Input and output in phase
USES the
Three-phase brushless dc motor
Power MOS and IGBT drive
Full bridge drive
package
TSSOP20
QFN4 * 4 to 24 l
typical application circuit
pin configuration
function diagram
