I in procedures proposed in on-chip flash x08001000 address 0 ~ 0 x0800101f (256 bits) 32 bytes, write a uint64_t pData [4]={x1112131415161718 x1020304050607080 0, 0 x0102030405060708, 0, 0 x1213141516171819}; Then pData x2122232425262728 [0]=0, then the array pData [4] wrote x08001000 0 ~ 0 x0800101f, then the flash will hang up,

Of course, in the write operation is to perform the erase operation, I write operation process is: unlock_bank1 - & gt; Erase sector0 - & gt; The program 256 bits, & gt; Lock_bank1
If the array of values, so I can write any number of times; Once the value of the array has changed, so to write again to the same flash address space will understand hang up,

I don't know is his own in writing after the flash will not flash in what state, still say I again write operation after the data changes, erase the movement is the entire flash to wipe away, or flash in a certain condition led to I write wrong,

So I hope to have a friend encountered this problem and bosses can provide advice and help, also hope to have the official technical support to verify provide solutions, after all, if H750 on-chip flash support only write a word, in addition to put a bootloader still have what meaning,

Hope the solution, thank you!

CodePudding user response:

ECC error, can not repeat to write,

CodePudding user response:

STM32H750 FLash sector only one sector, size of 128 KB, your operation unlock_bank1 - & gt; erase sector0 - & gt; The program 256 bits, & gt; Lock_bank1

Why is erase sector 0?

Normal logic, it should be said erase sector 1?