ISSI IS62WV51216ALL/IS62WV51216BLL is high speed static RAM, 8 m a group of 512 k words by 16, it was made using ISSI high-performance CMOS technology, the highly reliable technology coupled with innovative circuit design technology, can produce high performance and low power consumption device,

When the CS1 is HIGH (uncheck) or CS2 for LOW (uncheck) or CS1 is LOW, CS2 for HIGH and LB and UB are HIGH, device will be in standby mode, in this mode, can reduce power consumption by CMOS input level,

Using chips that can input and output that can be easily extended memory, activation of LOW Write Enable (WE) control the Write and read of the memory, allowing access to the high byte data bytes (UB) and the LOW byte (LB),

IS62WV51216ALL and IS62WV51216BLL 48 pin mini BGA encapsulation in JEDEC standard mmx8.7 (7.2 mm) and 44 pins TSOP (TYPE II),

SRAM chip IS62WV51216, pin diagram is as follows:




IS62WV51216 pin in general is roughly divided into: the power cord, ground wire, address line, cable, line selection, writing can make side, reading can make the client and data mask signal lines,

Feature
? High speed access time: 45 ns, 55 ns
? CMOS low power run
- 36 mw (typical)
- 12 mu W (typical) CMOS standby
? TTL compatible interface level
? Single power supply
1.65 V - 2.2 V VDD (62 wv51216all)
2.5 V - 3.6 V VDD (62 wv51216bll)
? Completely static operation: no clock or refresh need
? Tri-state output
? High and low byte data control
? Can provide industrial temperature
? lead-free

CodePudding user response:

ISSI IS62WV51216ALL 8 m/IS62WV51216BLL is high speed static RAM, organization for 512 k words by 16, it was made using ISSI high-performance CMOS technology, the highly reliable technology coupled with innovative circuit design technology, can produce high performance and low power consumption device,

CodePudding user response:

When the CS1 is HIGH (uncheck) or CS2 for LOW (uncheck) or CS1 is LOW, CS2 for HIGH and LB and UB are HIGH, device will be in standby mode, in this mode, can reduce power consumption by CMOS input level,

CodePudding user response:

ISSI 8 MB LP SRAM chips
Density Org. Part Number Vcc. Speed (ns) Pkg (Pins)
8 MB 1 mx8 IS62C10248AL 5 v 45 zhongguo kuangye daxue TSOP2 (44), BGA (48)
8 MB 1 mx8 IS62WV10248DALL/BLL 1.65 3.6 V 35,45,55 sTSOP1 (32), TSOP12 (32), BGA (36), SOP (32)
8 MB 512 kx16 IS62WV51216ALL/1.65 3.6 V the BLL 45 zhongguo kuangye daxue TSOP2 (44), BGA (48)
8 MB 512 kx16 IS62C51216AL 5 v 45 zhongguo kuangye daxue TSOP2 (44), BGA (48)
8 MB 512 kx16 IS62 1.65 3.6 V/65 wv51216eall/EBLL 35,45,55 sTSOP1 (32), TSOP12 (32), BGA (36), SOP (32)
1.65 3.6 V 35 8 MB 1 mx8 IS62WV10248EBLL,45,55 sTSOP1 (32), TSOP12 (32), BGA (36), SOP (32)
1.65 3.6 V 35 8 MB 1 mx8 IS65WV10248EALL,45,55 sTSOP1 (32), TSOP12 (32), BGA (36), SOP (32)
1.65 3.6 V 35 8 MB 1 mx8 IS65WV10248EBLL,45,55 sTSOP1 (32), TSOP12 (32), BGA (36), SOP (32)
8 MB 1 mx8 IS62 1.65 3.6 V/65 wv10248eall/EBLL 45 zhongguo kuangye daxue TSOP2 (44), BGA (48)